description outline drawing unitmm rt1n141u rt1n141c rt1n141x is a one chip transistor with built-in bias resis tor,pnp type is rt1p141x. feature ?built-in bias resistor (r1=10k,r2=10k). application inverted circuit,switching c ircuit,interface circuit, driver circuit. equivalent circuit jeita jedec jeitasc-59 jedecsimilar to to-236 terminal connector ?base ?emitter ?collector terminal connector ?base ?emitter ?collector RT1N141M rt1n141t rt1n141s jeita jedec jeita jedec terminal connector ?emitter ?collector ?base jeitasc-70 jedec terminal connector ?base ?emitter ?collector terminal connector ?base ?emitter ?collector 0.15 0 0.1 0.55 0.7 0.3 0.4 0.8 0.4 1.6 0.5 0.5 1.0 1.6 0.16 0 0.1 0.8 1.1 0.4 0.5 1.5 0.5 2.5 0.95 0.95 1.90 2.9 c (out) e (gnd) b (in) r1 r2 0.15 0 0.1 0.7 0.9 0.3 1.25 0.425 2.1 0.65 0.65 1.3 2.0 0.425 4.0 1.0 1.0 14.0 3.0 1.27 1.27 0.45 0.1 2.5 0.4 0.45 0.25 0.2 0.8 0.2 0.4 0.4 0.8 1.2 ? series product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
maximum rating (ta=25) rating symbol parameter rt1n141t rt1n141u RT1N141M rt1n141c rt1n141s unit collector to base voltage 50 v emitter to base voltage 10 v collector to emitter voltage 50 v collector current 100 ma peak collector current 200 ma collector dissipation(ta=25) 125 125 150 450 mw junction temperature +125 +150 storage temperature -55+125 -55+150 package mounted on 9mm19mm1mm glass-epoxy s ubstrate. electrical characteristics (ta=25) limit symbol parameter test condition min typ max unit ?? c to e break down voltage i c =100ar be = 50 v collector cut off current v cb =50vi e =0 0.1 a dc forward current gain v ce =5vi c =10ma 50 c to e saturation voltage i c =10mai b =0.5ma 0.1 0.3 v ? input on voltage v ce =0.2vi c =5ma 1.5 3.0 v ? input off voltage v ce =5vi c =100a 0.8 1.1 v input resistance 7.0 10 13 k resistance ratio 0.9 1.0 1.1 gain band width product v ce =6vi e =-10ma 200 mhz ? series product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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